Paper
15 May 2012 Low-nonlinearity and low-loss silicon slot waveguides with ALD-grown thin films
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Abstract
We demonstrate low-loss silicon slot waveguides filled with single and dual atomic layer deposited oxide layers. Propagation losses less than 5 dB/cm and 8 dB/cm are achieved for the waveguides with single (Al2O3) and double (Al2O3-TiO2) layers, respectively. The devices are fabricated using low-temperature CMOS compatible processes. The geometries allow nonlinearities nearly two orders of magnitude smaller than plain silicon waveguides.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Karvonen, A. Säynätjoki, X. Tu, T. Y. Liow, M. Hiltunen, J. Hiltunen, A. Tervonen, G. Q. Lo, and S. Honkanen "Low-nonlinearity and low-loss silicon slot waveguides with ALD-grown thin films", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84311M (15 May 2012); https://doi.org/10.1117/12.921805
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Cited by 1 scholarly publication.
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KEYWORDS
Waveguides

Silicon

Atomic layer deposition

Wave propagation

Lithography

Refractive index

Titanium dioxide

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