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15 May 2012 Low-nonlinearity and low-loss silicon slot waveguides with ALD-grown thin films
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Abstract
We demonstrate low-loss silicon slot waveguides filled with single and dual atomic layer deposited oxide layers. Propagation losses less than 5 dB/cm and 8 dB/cm are achieved for the waveguides with single (Al2O3) and double (Al2O3-TiO2) layers, respectively. The devices are fabricated using low-temperature CMOS compatible processes. The geometries allow nonlinearities nearly two orders of magnitude smaller than plain silicon waveguides.
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L. Karvonen, A. Säynätjoki, X. Tu, T. Y. Liow, M. Hiltunen, J. Hiltunen, A. Tervonen, G. Q. Lo, and S. Honkanen "Low-nonlinearity and low-loss silicon slot waveguides with ALD-grown thin films", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84311M (15 May 2012); https://doi.org/10.1117/12.921805
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