10 May 2012 Approximate model of a DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide
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An approximate method of modeling of Raman generation in silicon-on-insulator(SOI) rib waveguide with DBR/F-P resonator including nonlinear effects such as Raman amplification and free-carrier absorption (FCA), is presented. In our detailed theoretical model, we consider coupled set of differential equations for pump signal and Stokes signal inside the laser cavity. In threshold analysis of steady-state Raman laser operation, we assume that the pump signal distribution is determined from linear equations. An analytical formula relating threshold pump power to the system parameters is obtained. The analysis of the above threshold operation is based on an energy theorem and threshold field approximation. In exact energy conservation relation, we approximate the pump and Stokes field distributions by these proportional to linear field distribution existing at the threshold, obtaining an approximate, semi-analytical expression related the Raman output power (i.e. the output power of Stokes lasing) to the pump power and system parameters. With this formula, the laser characteristics revealing the optimal rib waveguide geometry and the optimal coupling coefficients, which provide the maximal power efficiency, can be obtained.
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Anna Tyszka-Zawadzka, Anna Tyszka-Zawadzka, Pawel Szczepanski, Pawel Szczepanski, Miroslaw Karpierz, Miroslaw Karpierz, Agnieszka Mossakowska-Wyszynska, Agnieszka Mossakowska-Wyszynska, Mateusz Bugaj, Mateusz Bugaj, } "Approximate model of a DBR/F-P laser based on Raman effect in a silicon-on-insulator rib waveguide", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 84311X (10 May 2012); doi: 10.1117/12.922429; https://doi.org/10.1117/12.922429


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