11 May 2012 A photo-sensor on thin polysilicon membrane embedded in wafer level package LED
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A wafer level packaging LED with photo-sensor which is fabricated on thin poly-silicon membrane located on the corner of silicon cavity is presented in this paper. The wafer substrate was fabricated with (100) orientation silicon wafer and a cavity was etched on the top of the wafer with wet chemical anisotropic etching process for mounting a LED chip. A thin polysilicon membrane was fabricated on the corner of the cavity and a MSM (Metal Semiconductor Metal) type photo-sensor was fabricated on the thin polysilicon membrane. The photo-sensor fabrication and LED packaging were completed on wafer level. The embedded photo-sensor in a wafer level packaging LED is designed to measure light intensity of a LED. The membrane structure photo-sensor can sense the light of the mounted LED directly, so it can measure accurate light intensity of the wafer level packing LED.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin Kwan Kim, Jin Kwan Kim, Hee Chul Lee, Hee Chul Lee, } "A photo-sensor on thin polysilicon membrane embedded in wafer level package LED", Proc. SPIE 8431, Silicon Photonics and Photonic Integrated Circuits III, 843121 (11 May 2012); doi: 10.1117/12.921623; https://doi.org/10.1117/12.921623


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