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15 May 2012 Three-dimensional simulation of 1300-nm AlGaInAs VCSEL arrays
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Abstract
We present the optimization of the carrier injection, heat flow and optical confinement aimed for single mode operation. The analyzed structure incorporates InAlGaAs quantum wells within InP cavity. The cavity is bounded by AlGaAs/GaAs DBRs The tunnel junction is responsible for carrier funneling into the active region. The air-gap etched at the interface between cavity and top DBR provides the confinement of the lateral modes. To rigorously simulate the physical phenomena taking place in the device we used multi-physical model, which comprises three-dimensional models of optical (Plane Wave Admittance Method), thermal and electrical (Finite Element Method) phenomena. We perform the exhaustive modal analysis of the 1x3, 1x4 and 2x4 VCSEL arrays. In the analysis we investigate the influence of the distance between emitters. The analysis is performed for broad range of injected currents from threshold to the rollover. As the result we illustrate the complex competition of the modes, influence of the optical confinement on structure of the modes and determine the geometrical parameters, which favor the array modes in the considered array designs.
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Tomasz Czyszanowski, Maciej Dems, Michal Wasiak, and Robert P. Sarzala "Three-dimensional simulation of 1300-nm AlGaInAs VCSEL arrays", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320A (15 May 2012); https://doi.org/10.1117/12.922450
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