10 May 2012 Intra-cavity absorber photocurrent characteristics of a quantum dot laser emitting on two emission-states: experiment and simulation
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Abstract
In this contribution we investigate both experimentally and by simulations a quantum dot absorber of a two-section quantum dot laser as an intra-cavity photodiode with a focus on the photo-generated absorber current. The escape of the photo-generated ES carrier sweep-out from the absorber can be controlled by variably biasing the absorber either with a variable external resistor in resistor Self-electro-optic-effect device (resistor-SEED) configuration or by applying a reverse bias. This escape is directly observable in the absorber photocurrent. In the resistor-SEED regime where the absorber is operated in so-called photoconductive mode, a steep increase in photocurrent is observed when the ES joins the GS emission and is attributed to increased losses, as reported recently. In contrast, GS emission and a low photocurrent in the resistor-SEED regime corresponds to a large carrier occupation probability corresponding to a reduced escape. In reverse bias operation, sole ES emission is observed together with a shallow increase in photocurrent with increasing reverse bias, in analogy to the p-n photodiode characteristics. By joining both resulting photocurrent regimes, the respective contributions of carrier capture and escape in the absorber to the averaged photocurrent is identified by numerical simulations. The obtained numerical results are in excellent qualitative agreement with the experiment.
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Stefan Breuer, Mattia Rossetti, Lukas Drzewietzki, Ivo Montrosset, Mark Hopkinson, Wolfgang Elsässer, "Intra-cavity absorber photocurrent characteristics of a quantum dot laser emitting on two emission-states: experiment and simulation", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320H (10 May 2012); doi: 10.1117/12.927081; https://doi.org/10.1117/12.927081
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