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10 May 2012 Laterally-coupled high power GaSb distributed feedback lasers fabricated by nanoimprint lithography at 2 μm wavelength
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Abstract
Here we present a device concept utilizing GaSb-based laterally-coupled DFB-lasers. Fabrication procedure to define the ridge waveguide and the grating makes use of nanoimprint lithography. This technology addresses issues related to mass fabrication and cost of the DFB-lasers. We demonstrate state-of-the-art devices on a range of wavelengths around 2 μm. These lasers exhibit single-mode operation with a maximum side-mode suppression ratio of more than 55 dB and high output power of ~25 mW.
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K. Haring, J. Paajaste, R. Koskinen, S. Suomalainen, J. Viheriälä, A. Laakso, T. Niemi, and M. Guina "Laterally-coupled high power GaSb distributed feedback lasers fabricated by nanoimprint lithography at 2 μm wavelength", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320T (10 May 2012); https://doi.org/10.1117/12.922811
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