10 May 2012 Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg+ ions
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Abstract
This paper presents the development and narrow-linewidth characteristics of an optically-pumped vertical external-cavity surface-emitting laser emitting light near 1120 nm. The laser development is motivated by the need to achieve narrowlinewidth, frequency-stable laser emission near 280 nm for cooling of Mg+ ions. The laser is capable of emitting ~0.8 W at 1118.542 nm in a less than 300 kHz linewidth.
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Sanna Ranta, Sanna Ranta, Tomi Leinonen, Tomi Leinonen, Miki Tavast, Miki Tavast, Ryan Epstein, Ryan Epstein, Mircea Guina, Mircea Guina, } "Narrow linewidth 1120 nm GaInAs/GaAs VECSEL for cooling Mg+ ions", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320V (10 May 2012); doi: 10.1117/12.922514; https://doi.org/10.1117/12.922514
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