Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV

Thomas Schwarzbäck; Hermann Kahle; Michael Jetter; Peter Michler

doi:10.1117/12.922584

10 May 2012 Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV

Thomas Schwarzbäck, Hermann Kahle, Michael Jetter, Peter Michler

Author Affiliations +

Proceedings Volume 8432, Semiconductor Lasers and Laser Dynamics V; 84320W (2012) https://doi.org/10.1117/12.922584
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

We present a non-resonantly pumped vertical external cavity surface-emitting laser in a compact v-shaped cavity configuration. By using intra-cavity frequency doubling in combination with a birefringent filter, a tunable high power UV laser source with an emission wavelength around 335 nm is realized. The fundamental red laser emission is based on a metal-organic vapor-phase epitaxy grown (Ga_xIn_1-x)_0.5P_0.5/[(Al_xGa_1-x)_yIn_1-y]_0.5P_0.5 (abbr. GaInP/AlGaInP) multi-quantum-well structure. Five quantum well packages with four compressively strained quantum wells are placed in a separate confinement heterostructure in a resonant periodic gain design in strain-compensating quaternary AlGaInP barriers and cladding layers, respectively. The 3 λ cavity is fabricated on a 55 λ/4 pairs Al_0.45Ga_0.55As/AlAs distributed Bragg reflector. By using a beta barium borate non-linear crystal for second harmonic generation, output powers up to 150mWat a wavelength of 335 nm could be realized. Tuning of the laser resonance was accomplished with a birefringent filter. A tuning of 9 nm in the UV will be shown.

Citation Download Citation

Thomas Schwarzbäck, Hermann Kahle, Michael Jetter, and Peter Michler "Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320W (10 May 2012); https://doi.org/10.1117/12.922584

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