10 May 2012 Simultaneous multi-state stimulated emission in quantum dot lasers: experiment and analytical approach
Author Affiliations +
Abstract
The theoretical investigation of the double-state lasing phenomena in InAs/InGaAs quantum dot lasers has been carried out. The new mechanism of the ground-state lasing quenching, which takes place in quantum dot (QD) laser operating in double-state lasing regime at high pump level, was proposed. The difference between electron and hole capture rates causes the depletion of the hole levels and consequently leads to the decrease of an output lasing power via QD ground state with the growth of injection. Moreover, it was shown that the hole-to-electron capture rates ratio strongly affects both the light-current curve and the key laser parameters. The model of the simultaneous lasing through the ground and excited QD states was developed which allows to describe the observed quenching quantitatively.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Korenev, A. V. Savelyev, A. E. Zhukov, A. V. Omelchenko, M. V. Maximov, Yu. M. Shernyakov, "Simultaneous multi-state stimulated emission in quantum dot lasers: experiment and analytical approach", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84321L (10 May 2012); doi: 10.1117/12.922754; https://doi.org/10.1117/12.922754
PROCEEDINGS
6 PAGES


SHARE
Back to Top