15 May 2012 Electrical and optical characterisation of mid-IR GaAs/AlGaAs quantum cascade lasers
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We report on the study of the temperature influence on optical and electrical performance of the mid-IR GaAs/AlGaAs QCLs. The temperature dependence of the threshold current, output power, slope efficiency, wall-plug efficiency, characteristic temperatures T0 and T1, and waveguide losses is investigated. In addition, the influence of different mesa dimensions on the QCL parameters is analyzed. Experimental results clearly indicate that among the examined geometries the 25μm wide mesa devices exhibit the best operational parameters i.e., the highest Tmax and T0, highest wall-plug and slope efficiency, as well as a small temperature increases and the smallest thermal resistivity in the active area. The knowledge of the above parameters is crucial for designing GaAs/AlGaAs-based devices for high temperature operation.­¬«
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dorota Pierścińska, Dorota Pierścińska, Kamil Pierściński, Kamil Pierściński, Malgorzata Iwińska, Malgorzata Iwińska, Kamil Kosiel, Kamil Kosiel, Anna Szerling, Anna Szerling, Piotr Karbownik, Piotr Karbownik, Maciej Bugajski, Maciej Bugajski, } "Electrical and optical characterisation of mid-IR GaAs/AlGaAs quantum cascade lasers", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84321S (15 May 2012); doi: 10.1117/12.922020; https://doi.org/10.1117/12.922020


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