2 May 2012 Correlation between surface topography and short-circuit current density for thin-film silicon solar cells
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Abstract
The scattering of light by the textured transparent conductive oxide (TCO) in thin-film silicon solar cells is frequently described by transmission haze and angular intensity distribution (AID) at the interface between the TCO and air. The scattering is expected to improve the light trapping and, therefore, the absorption of the solar cell. Using these scattering properties as input parameters for the electrical modeling of thin-film solar cells leads to significant deviations from the measurements for short circuit current densities. The major disadvantage of the AID measurement at the TCO/air interface is that in real thin-film silicon solar cells the TCO/Si interface is relevant. We use a model that is based on scalar scattering theory to calculate the scattering properties at the transition into air and into silicon. The model takes into account the measured surface topography and the optical constants of the adjacent media. For a series of μc-Si:H cells on ZnO:Al with different surface topographies, AID and the transmission haze into a μc-Si:H half space are calculated. From these results, a quantity is derived that describes the scattering efficiency. This quantity is compared to the short circuit current densities of μc-Si:H solar cells showing good agreement. It will be shown that for artificially modified textures an increase in the short-circuit current density and thus, the efficiency of thin-film silicon solar cells can be achieved.
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A. Hoffmann, A. Hoffmann, G. Jost, G. Jost, K. Bittkau, K. Bittkau, R. Carius, R. Carius, } "Correlation between surface topography and short-circuit current density for thin-film silicon solar cells", Proc. SPIE 8438, Photonics for Solar Energy Systems IV, 84381H (2 May 2012); doi: 10.1117/12.922797; https://doi.org/10.1117/12.922797
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