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2 May 2012 Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films
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Abstract
This paper studies the effect of femtosecond laser treatment in air of hydrogenated amorphous silicon thin films (a-Si:H) on their structural, electrical and photoelectric properties. The possibility of laser-induced crystallization of a-Si:H films with controlled crystalline volume fraction was shown. A sufficient increase of dark conductivity was observed for laser treated a-Si:H films which crystallinity exceeds 7%. Such increase was attributed to change in conductivity mechanism. However, spectral dependences of absorption coefficient did not show any qualitative changes with the laser fluence increase. It was found that spallation and oxidation of the film took place when laser fluence became reasonably high.
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Andrey V. Emelyanov, Mark V. Khenkin, Andrey G. Kazanskii, Pavel A. Forsh, Pavel K. Kashkarov, Evgeny V. Lyubin, Andrey A. Khomich, Mindaugas Gecevicius, Martynas Beresna, and Peter G. Kazansky "Structural and electrophysical properties of femtosecond laser exposed hydrogenated amorphous silicon films", Proc. SPIE 8438, Photonics for Solar Energy Systems IV, 84381I (2 May 2012); https://doi.org/10.1117/12.922896
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