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9 May 2012 Silicon-on-insulator (SOI) nanobeam optical cavities for refractive index based sensing
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Abstract
We present the design modelling and fabrication of Silicon-On-Insulator (SOI) nanobeam cavities that are immersed in a microfluidic system for refractive index sensing. The device has sensitivity value of greater than 200 nm/RIU with a Q-factor more than 20 000 in water. It was fabricated on a SOI platform and working at telecom wavelengths. The use of the SOI platform also offers further possibilities of integration with CMOS technologies.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ghazali A. Rahman, Philippe Velha, Richard M. De La Rue, and Nigel P. Johnson "Silicon-on-insulator (SOI) nanobeam optical cavities for refractive index based sensing", Proc. SPIE 8439, Optical Sensing and Detection II, 84391Q (9 May 2012); https://doi.org/10.1117/12.922554
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