9 May 2012 Silicon-on-insulator (SOI) nanobeam optical cavities for refractive index based sensing
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We present the design modelling and fabrication of Silicon-On-Insulator (SOI) nanobeam cavities that are immersed in a microfluidic system for refractive index sensing. The device has sensitivity value of greater than 200 nm/RIU with a Q-factor more than 20 000 in water. It was fabricated on a SOI platform and working at telecom wavelengths. The use of the SOI platform also offers further possibilities of integration with CMOS technologies.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Ghazali A. Rahman, M. Ghazali A. Rahman, Philippe Velha, Philippe Velha, Richard M. De La Rue, Richard M. De La Rue, Nigel P. Johnson, Nigel P. Johnson, } "Silicon-on-insulator (SOI) nanobeam optical cavities for refractive index based sensing", Proc. SPIE 8439, Optical Sensing and Detection II, 84391Q (9 May 2012); doi: 10.1117/12.922554; https://doi.org/10.1117/12.922554


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