The photodiode (PD) is a key component in optical transmission and optical measurement systems which receive optical
signals and convert them into electric signals. High speed, high responsivity, high power and low dark current are
desirable attributes of the PD in these applications, but also a simple fabrication process for high yield and low cost is
essential for industry production. In this paper, an undercut-air-bridge high speed InGaAs/InP PIN structural photodiode
is presented. By utilizing the crystal orientation dependent wet etching of InP material and designing the arms of the
bridge with proper angle, the air bridge was easily obtained, which greatly eased the fabrication. The fabricated devices
with 120μm×3μm ridge waveguides work robustly up to 30GHz in the measurements and potentially faster with
optimized material.
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