9 May 2012 Monothically integrated GaAs and Si based long-wavelength tunable photodetector
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We demonstrated a tunable long wavelength photodetector by using heteroepitaxy growth of InP-based In0.53Ga0.47As-InP p-i-n structure on GaAs based GaAs/AlAs Fabry-Perot filter structure. High quality heterepitaxy was realized by employing a thin low-temperature buffer layer. A wavelength tuning range of 10.0 nm, a quantum efficiency of 23%, a spectral linewidth of 0.8 nm and a 3-dB bandwidth of 6.2 GHz were simultaneously obtained in the device. Moreover, a Si based long wavelength photodetector with the same device structure was also fabricated successfully by using Si/GaAs and GaAs/InP heteroepitaxy. Crack-free GaAs on Si and high-quality epilayer with area of 800μm×700μm was obtained by using mid-patterned growth and thermal-cycle annealing. The Si-based photodetector with spectral linewidth of 1.1nm (FWHM) and quantum efficiency of 9.0% was demonstrated.
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Hailin Cui, Hailin Cui, Jihe Lv, Jihe Lv, Hui Huang, Hui Huang, } "Monothically integrated GaAs and Si based long-wavelength tunable photodetector", Proc. SPIE 8439, Optical Sensing and Detection II, 84392D (9 May 2012); doi: 10.1117/12.923624; https://doi.org/10.1117/12.923624


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