Jaynes-Cummings model of an indirect gap semiconductor cavity

Jose M. Escalante Fernandez; Alejandro Martinez

doi:10.1117/12.921079

4 May 2012 Jaynes-Cummings model of an indirect gap semiconductor cavity

Jose M. Escalante Fernandez, Alejandro Martinez

Proceedings Volume 8440, Quantum Optics II; 84400O (2012) https://doi.org/10.1117/12.921079
Event: SPIE Photonics Europe, 2012, Brussels, Belgium

Abstract

In this work, we present a Jaynes-Cummings model of an indirect bandgap semiconductor engineered to confine simultaneously photons and phonons (acousto-optical cavity). From our theoretical analysis, the typical collapse-revival behavior is obtained. Finally, we get an analytical approximate expression of Rabi frequency in such a system.

Citation Download Citation

Jose M. Escalante Fernandez and Alejandro Martinez "Jaynes-Cummings model of an indirect gap semiconductor cavity", Proc. SPIE 8440, Quantum Optics II, 84400O (4 May 2012); https://doi.org/10.1117/12.921079

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