29 June 2012 New development system for EUV mask
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844105 (2012) https://doi.org/10.1117/12.979645
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Abstract
EUV lithography is one of the approaches to manufacture half-pitch 1x nm devices. It is required high CD mean control, high CD uniformity, and low defect density for EUV mask in common with DUV mask. In addition, backside defect density is drastically tightened to avoid overlay error in EUV scanner. PGSD (Proximity-Gap-Suction-Development), a novel development system we developed, has kept upgrading to satisfy the demand of most-advanced devices, and 3rd-generation PGSD (PGSD Gen. III) which developed for EUV mask will be contributed to achieve required accuracy of EUV mask. In this paper, we propose the concept of PGSD Gen. III and report its performance.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masatoshi Terayama, Masatoshi Terayama, Hideaki Sakurai, Hideaki Sakurai, Mari Sakai, Mari Sakai, Masamitsu Itoh, Masamitsu Itoh, Hideo Funakoshi, Hideo Funakoshi, Hideaki Iwasaka, Hideaki Iwasaka, Junko Iizuka, Junko Iizuka, Mitsuaki Maruyama, Mitsuaki Maruyama, Naoya Hayashi, Naoya Hayashi, } "New development system for EUV mask", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844105 (29 June 2012); doi: 10.1117/12.979645; https://doi.org/10.1117/12.979645
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