29 June 2012 CD-Metrology of EUV masks in the presence of charging: measurement and simulation
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844108 (2012) https://doi.org/10.1117/12.999462
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Abstract
The required measurement precision for multilayered EUV mask metrology is set below 0.4 nm three sigma. In addition to limited precision of CD-SEM, there are fundamental physical factors that deteriorate the accuracy of the measurements, the most important of which is charging. It is widely believed that EUV masks are conductive. However, experiments have revealed noticeable charging in CD-SEM measurements of EUV masks that cannot be ignored. In this work, the results of the experiments and simulations of the SEM signals are presented. It was shown that charging affects the metrology in a few ways. The SEM signal shifts at each frame, changes with beam current and also depends on the wall angle of the absorber. The results of the simulations are compared to experimental results.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Babin, Sergey Borisov, Hidemitsu Hakii, Yasushi Nishiyama, Isao Yonekura, "CD-Metrology of EUV masks in the presence of charging: measurement and simulation", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844108 (29 June 2012); doi: 10.1117/12.999462; https://doi.org/10.1117/12.999462
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