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29 June 2012 The door opener for EUV mask repair
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84410F (2012) https://doi.org/10.1117/12.978285
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Abstract
The EUV-photomask is used as mirror and no longer as transmissive device. In order to yield defect-free reticles, repair capability is required for defects in the absorber and for defects in the mirror. Defects can propagate between the EUV mask layers, which makes the detection and the repair complex or impossible if conventional methods are used. In this paper we give an overview of the different defect types. We discuss the EUV repair requirements including SEMinvisible multilayer defects and blank defects, and demonstrate e-beam repair performance. The repairs are qualified by SEM, AFM and through-focus wafer prints. Furthermore a new repair strategy involving in-situ AFM is introduced. We will apply this new strategy on real defects and verify the repair quality using state of the art EUV wafer printing technology.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Waiblinger, R. Jonckheere, Tristan Bret, D. Van den Heuvel, C. Baur, and G. Baralia "The door opener for EUV mask repair", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410F (29 June 2012); https://doi.org/10.1117/12.978285
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