29 June 2012 Masks data preparation flow for advanced technology nodes
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84410S (2012) https://doi.org/10.1117/12.978290
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Abstract
Semiconductors technology trend to reduce critical features dimension has dramatically increased design file size. Design-tape-out flows have seen the introduction of Optical Proximity Correction (OPC) step that led to new files introduction, with an increase in the amount of data to be processed downstream in the flow. Today in 28 nm technology node, design post-OPC data files sizes reach hundreds of gigabytes. 20 nm technology node and below development is demonstrating that correction techniques complexity is increasing. That predicts new challenges in mask data preparation flow for advanced technology nodes. We have developed a mask data preparation flow designed to tackle the challenge of maintaining a consistent delivery time to mask shops, while using efficiently hardware investment. Addressing post-OPC data file size increase toward mask data preparation required innovations in data processing for fractured data files creation, and also in data review techniques. The paper will discuss these innovations and conduct a demonstration with results in a 28 nm technology node production flow. Cost-benefit analysis will be illustrated with runtime comparisons of fractured data creation, and data review between traditional mask data preparation flows and this specific flow.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Antonio Marques, Corinne Miramond, Omar Ndiaye, "Masks data preparation flow for advanced technology nodes", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410S (29 June 2012); doi: 10.1117/12.978290; https://doi.org/10.1117/12.978290
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