New paradigm for effective particle removal cleaning of EUV mask

Jinsang Yoon; Han-Shin Lee; Hyoyeon Kim; Heungsuk Oh; Jaehyuck Choi; Paul Chung; Inkyun Shin; Chanuk Jeon

doi:10.1117/12.979820

29 June 2012 New paradigm for effective particle removal cleaning of EUV mask

Jinsang Yoon, Han-Shin Lee, Hyoyeon Kim, Heungsuk Oh, Jaehyuck Choi, Paul Chung, Inkyun Shin, Chanuk Jeon

Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 84410X (2012) https://doi.org/10.1117/12.979820
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan

Abstract

Spin cleaning tools have advantages in cross contamination compared to bath cleaning tools. Although spin speed is one of key parameters to increase the cleaning efficiency of the spin cleaning tools, its optimization has been limited due to the generation of ESD (Electrostatic discharge) damage to optical masks. EUV masks, however, consist of more "stable" materials in terms of ESD damage so that it is allowed to increase spin speed to improve cleaning performance for EUV mask. In this paper, we showed particle removal efficiencies dependent on mask spin speed for megasonic, nano-binary, or the combination module of those two cleaning mechanisms. We also demonstrated that different characteristics of particle removal efficiency as a function of spin speed for megasonic and nano-binary cleanings can be predicted from simulation of particle trajectory in liquid medium and liquid hitting rates on mask spinning at various spin speeds. This work clearly signifies that it is possible to improve cleaning performance through optimization of known parameters.

Citation Download Citation

Jinsang Yoon, Han-Shin Lee, Hyoyeon Kim, Heungsuk Oh, Jaehyuck Choi, Paul Chung, Inkyun Shin, and Chanuk Jeon "New paradigm for effective particle removal cleaning of EUV mask", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410X (29 June 2012); https://doi.org/10.1117/12.979820

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