29 June 2012 Placement error due to charging in EBL: experimental verification of a new correction model
Author Affiliations +
Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844112 (2012) https://doi.org/10.1117/12.978924
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Abstract
Placement error due to charging in electron beam lithography has been identified as the most important factor limiting placement accuracy in EBL, which is especially important in the fabrication of masks for double patterning. Published results from a few major companies demonstrated that the placement errors due to charging are far larger than 10 nm. Here, we will describe the results of predicting the charging placement error based on a significantly improved physical model. Specially designed patterns were used to characterize the details of the charging placement error. Reference marks were exposed before the exposure of the test pattern, during the exposure, and after the exposure was completed. The experimental results were used to calibrate the parameters of the physical model. Furthermore, the DISPLACE software was used to predict the placement error maps for other experiments. The results of the measurements and simulations are presented in this paper. The results produced by the software were in good agreement with the experimental measurements. When the amplitude and the direction of the placement error due to charging is predicted, it can be easily corrected using readily available software for mask data preparation, or directly in EBL writers.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergey Babin, Sergey Babin, Sergey Borisov, Sergey Borisov, Yasuki Kimura, Yasuki Kimura, Kenji Kono, Kenji Kono, Vladimir Militsin, Vladimir Militsin, Ryuuji Yamamoto, Ryuuji Yamamoto, } "Placement error due to charging in EBL: experimental verification of a new correction model", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844112 (29 June 2012); doi: 10.1117/12.978924; https://doi.org/10.1117/12.978924
PROCEEDINGS
8 PAGES


SHARE
Back to Top