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29 June 2012 Defect management of EUV mask
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844118 (2012) https://doi.org/10.1117/12.978976
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
Abstract
Extreme Ultraviolet Lithography (EUVL) is a promising technology for the fabrication of ULSI devices with 20nm half-pitch node. One of the key challenges before EUVL is to achieve defect-free masks. There are three main categories of mask defects: multilayer defects which cause phase defects, absorber pattern defects, and particles during blank/mask fabrication or mask handling after mask fabrication. It is important to manage multilayer defect because small multilayer defects are difficult to be identified by SEM/AFM after mask patterning and can impact wafer printing. In this paper, we assess blank defect position error detected by 3rd generation blank inspection tool, using blank defect information from blank supplier and 199nm wavelength patterned mask inspection tool NPI-7000. And we rank blank defect in the order of projection defect size to multilayer in order to estimate blank defect printability. This method avoids overestimating the number of potential killer defects that hardly be identified by SEM/AFM under the condition that EUV-AIMS is not available.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamo, Koji Murano, Kosuke Takai, Kazuki Hagihara, Shinji Yamaguchi, Masato Naka, Keiko Morishita, Ryoji Yoshikawa, Masamitsu Itoh, Suigen Kyoh, and Naoya Hayashi "Defect management of EUV mask", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844118 (29 June 2012); https://doi.org/10.1117/12.978976
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