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29 June 2012 Evaluation of EUV mask cleaning process
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Proceedings Volume 8441, Photomask and Next-Generation Lithography Mask Technology XIX; 844119 (2012)
Event: Photomask and NGL Mask Technology XIX, 2012, Yokohama, Japan
This paper presents results of the optimization of an EUV mask cleaning process and compares the results to data obtained on COG and EPSM masks using processes specifically designed for such masks. The key parameter investigated was cleaning efficiency, as measured in terms of Particle Removal Efficiency (PRE), CD shift and actinic reflectivity change. The PRE of 100%, 84%, and 80% was obtained for COG, EUV and HT-PSM masks, respectively. The CD change per clean cycle was 0.07nm. The feature damage limit was 50nm. Actinic reflectivity change in the range <0.1% per clean cycle was obtained for the process.
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Pavel Nesladek, Stefan Rümmelin, and Uzodinma Okoroanyanwu "Evaluation of EUV mask cleaning process", Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844119 (29 June 2012); doi: 10.1117/12.964413;

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