25 September 2012 Characterization of an x-ray hybrid CMOS detector with low interpixel capacitive crosstalk
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Abstract
We present the results of x-ray measurements on a hybrid CMOS detector that uses a H2RG ROIC and a unique bonding structure. The silicon absorber array has a 36μm pixel size, and the readout array has a pitch of 18μm; but only one readout circuit line is bonded to each 36x36μm absorber pixel. This unique bonding structure gives the readout an effective pitch of 36μm. We find the increased pitch between readout bonds significantly reduces the interpixel capacitance of the CMOS detector reported by Bongiorno et al. 20101 and Kenter et al. 2005.2
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Christopher V. Griffith, Christopher V. Griffith, Stephen D. Bongiorno, Stephen D. Bongiorno, David N. Burrows, David N. Burrows, Abraham D. Falcone, Abraham D. Falcone, Zachary R. Prieskorn, Zachary R. Prieskorn, } "Characterization of an x-ray hybrid CMOS detector with low interpixel capacitive crosstalk", Proc. SPIE 8453, High Energy, Optical, and Infrared Detectors for Astronomy V, 84530F (25 September 2012); doi: 10.1117/12.925732; https://doi.org/10.1117/12.925732
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