27 September 2012 Variable range hopping in hydrogenated amorphous silicon-nickel alloys
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Abstract
On the insulating side of the metal-insulator transition (MIT), the study of the effect of low Temperatures T on the electrical transport in amorphous silicon-nickel alloys a-Si1-yNiy:H exhibits that the electrical conductivity follows, at the beginning, the Efros-Shklovskii Variable Range Hopping regime (ES VRH) with T-1/2. This behaviour showed that long range electron-electron interaction reduces the Density Of State of carriers (DOS) at the Fermi level and creates the Coulomb gap (CG). For T higher than a critical value of temperature TC, we obtained the Mott Variable Range Hopping regime with T-1/4, indicating that the DOS becomes almost constant in the vicinity of the Fermi level. The critical temperature TC decreases with nickel content in the alloys.
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Abdelfattah Narjis, Abdelfattah Narjis, Abdelhamid El Kaaouachi, Abdelhamid El Kaaouachi, Abdelghani Sybous, Abdelghani Sybous, Lhoussine Limouny, Lhoussine Limouny, Said Dlimi, Said Dlimi, Gerard Biskupski, Gerard Biskupski, } "Variable range hopping in hydrogenated amorphous silicon-nickel alloys", Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590V (27 September 2012); doi: 10.1117/12.924337; https://doi.org/10.1117/12.924337
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