Paper
27 September 2012 Study of electrical conductivity and scale theory in metallic n-type GeSb
Abdelghani Sybous, Abdelhamid El Kaaouachi, Abdelfattah Narjis, Lhoussine Limouny, Said Dlimi, Gerard Biskupski
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Abstract
We present measurements of the electrical conductivity of barely metallic n-type GeSb that are driven to the metal-insulator transition (MIT) by impurity concentration. The experiments were carried out at low temperature in the range (4.2 -0.066 K) and with impurity concentrations up 6.41017 cm−3 . On the metallic side of the MIT, the electrical conductivity is found to behave like σ =σ0 + mT1/2 down to 66 mK. Physical explanation to the temperature dependence of the conductivity is given in metallic side of the MIT using a competition between two effects involved in the mechanisms of conduction, like electron-electron interaction effect, and weak localization effect.
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Abdelghani Sybous, Abdelhamid El Kaaouachi, Abdelfattah Narjis, Lhoussine Limouny, Said Dlimi, and Gerard Biskupski "Study of electrical conductivity and scale theory in metallic n-type GeSb", Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590W (27 September 2012); https://doi.org/10.1117/12.924339
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KEYWORDS
Magnetism

Electroluminescence

Scattering

Diffusion

Temperature metrology

Transition metals

Dielectrics

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