27 September 2012 Variable range hopping conduction in insulating n-type InSb semiconductor
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Longitudinal and positive magnetoresistance behaviour was used to determine what of the Variable Range Hopping (VRH) conduction regime is found in insulating InSb sample, Mott VRH regime or Efros- Shklovskii (ES) VRH regime. Experimental results are reported on field longitudinal magnetoresistance in insulating n-type InSb sample in which range hopping occurs at low temperatures. Positive magnetoresistance associated with VRH conduction has been observed. Experimental data are tentatively compared with available theoretical models in the insulating regime.
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Abdelghani Sybous, Abdelghani Sybous, Abdelhamid El Kaaouachi, Abdelhamid El Kaaouachi, Said Dlimi, Said Dlimi, Abdelfattah Narjis, Abdelfattah Narjis, Lhoussine Limouny, Lhoussine Limouny, Bruno Capoen, Bruno Capoen, Gerard Biskupski, Gerard Biskupski, } "Variable range hopping conduction in insulating n-type InSb semiconductor", Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590Z (27 September 2012); doi: 10.1117/12.929132; https://doi.org/10.1117/12.929132

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