27 September 2012 Variable range hopping conduction in insulating n-type InSb semiconductor
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Abstract
Longitudinal and positive magnetoresistance behaviour was used to determine what of the Variable Range Hopping (VRH) conduction regime is found in insulating InSb sample, Mott VRH regime or Efros- Shklovskii (ES) VRH regime. Experimental results are reported on field longitudinal magnetoresistance in insulating n-type InSb sample in which range hopping occurs at low temperatures. Positive magnetoresistance associated with VRH conduction has been observed. Experimental data are tentatively compared with available theoretical models in the insulating regime.
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Abdelghani Sybous, Abdelhamid El Kaaouachi, Said Dlimi, Abdelfattah Narjis, Lhoussine Limouny, Bruno Capoen, Gerard Biskupski, "Variable range hopping conduction in insulating n-type InSb semiconductor", Proc. SPIE 8459, Physical Chemistry of Interfaces and Nanomaterials XI, 84590Z (27 September 2012); doi: 10.1117/12.929132; https://doi.org/10.1117/12.929132
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