Temperature dependence of the dark current and activation energy at avalanche onset of a GaN avalanche photodiodes

M. P. Ulmer; E. Cicek; R. McClintock; Z. Vashaei; M. Razeghi

doi:10.1117/12.929138

10 October 2012 Temperature dependence of the dark current and activation energy at avalanche onset of a GaN avalanche photodiodes

M. P. Ulmer, E. Cicek, R. McClintock, Z. Vashaei, M. Razeghi

Author Affiliations +

Proceedings Volume 8460, Biosensing and Nanomedicine V; 84601G (2012) https://doi.org/10.1117/12.929138
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States

Abstract

We report a study of the performance of an avalanche photodiode (APD) as a function of temperature from 564 K to 74 K. The dark current at avalanche onset decreases from 564 K to 74 K by approximately a factor of 125 and from 300 K to 74K the dark current at avalanche offset is reduced by a factor of about 10. The drop would have been considerably larger if the activation energy at avalanche onset (Ea) did not also decrease with decreasing temperature. These data give us insights into how to improve the single-photon counting performance of a GaN based ADP.

Citation Download Citation

M. P. Ulmer, E. Cicek, R. McClintock, Z. Vashaei, and M. Razeghi "Temperature dependence of the dark current and activation energy at avalanche onset of a GaN avalanche photodiodes", Proc. SPIE 8460, Biosensing and Nanomedicine V, 84601G (10 October 2012); https://doi.org/10.1117/12.929138

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