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9 October 2012 Optical spin injection and spin lifetime in Ge heterostructures
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Proceedings Volume 8461, Spintronics V; 84610P (2012) https://doi.org/10.1117/12.929204
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States
Abstract
We studied spin properties of Ge heterostructures by optical orientation and Hanle measurements. The circular polarization of the direct gap photoluminescence is shown to exceed the theoretical bulk limit, yielding about 37% and 85% for transitions with heavy and light holes, respectively. The energetic proximity of Γ and L valleys and ultrafast scattering of electrons from Γ to L states allowed us to resolve the spin dynamics of holes and to observe the polarization of electrons after scattering to L valleys. The spin relaxation analysis indicates that the spin lifetime of electrons exceeds 5 ns below 150 K, whereas it is in the 500 ps range for holes.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fabio Pezzoli, Federico Bottegoni, Dhara Trivedi, Franco Ciccacci, Anna Giorgioni, Pengki Li, Stefano Cecchi, Emanuele Grilli, Yang Song, Mario Guzzi, Hanan Dery, and Giovanni Isella "Optical spin injection and spin lifetime in Ge heterostructures", Proc. SPIE 8461, Spintronics V, 84610P (9 October 2012); https://doi.org/10.1117/12.929204
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