9 October 2012 Voltage control of magnetism in ferromagnetic structures
Author Affiliations +
Proceedings Volume 8461, Spintronics V; 84610Y (2012) https://doi.org/10.1117/12.982039
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States
Until now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation, particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals. A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning the fabrication and performance of magneto-electric field-effect devices.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Herrera Diez, L. Herrera Diez, W. Lin, W. Lin, A. Bernand-Mantel, A. Bernand-Mantel, L. Ranno, L. Ranno, D. Givord, D. Givord, L. Vila, L. Vila, P. Warin, P. Warin, A. Marty, A. Marty, N. Lei, N. Lei, T. Devolder, T. Devolder, J. V. Kim, J. V. Kim, N. Vernier, N. Vernier, P. Lecoeur, P. Lecoeur, D. Ravelosona, D. Ravelosona, } "Voltage control of magnetism in ferromagnetic structures", Proc. SPIE 8461, Spintronics V, 84610Y (9 October 2012); doi: 10.1117/12.982039; https://doi.org/10.1117/12.982039

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