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9 October 2012 Anatomy of phonon-induced spin relaxation processes in silicon
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Proceedings Volume 8461, Spintronics V; 84611B (2012) https://doi.org/10.1117/12.930798
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States
Abstract
We present a methodology to systematically and analytically treat phonon-induced spin relaxation of conduction electron in silicon. All leading order contribution from all phonon modes and scattering processes are considered and the results for spin-flip matrix elements and spin lifetime are summarized. We show the explicit dependence of matrix elements on the electron wavevectors, spin orientation and phonon polarization. These results are shown to be powerful especially under symmetry-breaking conditions when an averaging rough evaluation of the matrix elements is not sufficient. Corrections due to the special two-band degeneracy in the X point (near the conduction valley minima) are also discussed. Numerical calculation are used to confirm the analytical results.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yang Song and Hanan Dery "Anatomy of phonon-induced spin relaxation processes in silicon", Proc. SPIE 8461, Spintronics V, 84611B (9 October 2012); https://doi.org/10.1117/12.930798
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