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9 October 2012 Theory of organic magnetoresistance in disordered organic semiconductors
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Proceedings Volume 8461, Spintronics V; 84611L (2012) https://doi.org/10.1117/12.931473
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States
Abstract
The understanding of spin transport in organics has been challenged by the discovery of large magnetic field effects on properties such as conductivity and electroluminescence in a wide array of organic systems. To explain the large organic magnetoresistance (OMAR) phenomenon, we present and solve a model for magnetoresistance in positionally disordered organic materials using percolation theory. The model describes the effects of singlettriplet spin transitions on hopping transport by considering the role of spin dynamics on an effective density of hopping sites. Faster spin transitions open up `spin-blocked' pathways to become viable conduction channels and hence produce magnetoresistance. We concentrate on spin transitions under the effects of the hyperfine (isotropic and anisotropic), exchange, and dipolar interactions. The magnetoresistance can be found analytically in several regimes and explains several experimental observations
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nicholas J. Harmon and Michael E. Flatté "Theory of organic magnetoresistance in disordered organic semiconductors", Proc. SPIE 8461, Spintronics V, 84611L (9 October 2012); doi: 10.1117/12.931473; https://doi.org/10.1117/12.931473
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