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9 October 2012 Surface functionalization of ZnO films by THIOL
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Proceedings Volume 8461, Spintronics V; 84611S (2012)
Event: SPIE NanoScience + Engineering, 2012, San Diego, California, United States
In the present study, we have investigated the surface functionalization of dodecanethiol on ZnO film surface grown at three different oxygen partial pressure using pulsed laser deposition (PLD) technique. The thiol funcitonalized ZnO films have been examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM) measurement. XRD pattern show slight decrease in intensity of diffraction peak upon surface functionalization. The chemical bonding of ZnO with thiol has been confirmed by XPS measurement. The presence of S 2p3/2 peak centered about 163 eV suggests that proton has dissociated fromed thiol and form chemical bonding to the ZnO surface. PL measurements of thiol functionalized ZnO films show quenching of visible emission intensity relative to the unfunctionalized ZnO films. The quenching of visible emission suggests that thiol passivates surface defects via Zn-S bonding. Surface functionalization of ZnO films with thiol induces robust room temperature ferromagnetism as evidenced from VSM measurements.
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G. Jayalakshmi, K. Saravanan, and T. Balasubramanian "Surface functionalization of ZnO films by THIOL", Proc. SPIE 8461, Spintronics V, 84611S (9 October 2012);

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