Paper
10 October 2012 DNA-based thin-film dielectrics for potential application as gate insulators in OFETs
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Abstract
In this study, highly stable aqueous solutions of blends containing Deoxyribonucleic acid (DNA) and high k ceramics (BaTiO3 or TiO2) nanoparticles were processed. Dielectric and electrical properties of the as-prepared nanocomposites thin films were investigated. Dielectric Constant k values of 14 and capacitance density of 2.5 nF/cm2 were achieved for a 40 wt.% BaTiO3 loading at 1 KHz. The current-voltage (IV) measurements revealed electrical resistivity in the order of 1014 Ohm-cm with leakage current densities of the order of 10-9 A/cm2 for electric field biases up to 50V/μm.
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Fahima Ouchen, Narayanan Venkat, Kristi M. Singh, Mou Shin, Donna M. Joyce, Perry P. Yaney, Emily M. Heckman, Carrie M. Bartsch, and James G. Grote "DNA-based thin-film dielectrics for potential application as gate insulators in OFETs", Proc. SPIE 8464, Nanobiosystems: Processing, Characterization, and Applications V, 846409 (10 October 2012); https://doi.org/10.1117/12.943239
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KEYWORDS
Dielectrics

Ceramics

Field effect transistors

Ferroelectric materials

Capacitance

Titanium dioxide

Nanoparticles

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