17 October 2012 Optical and luminescent properties of CdSe/ZnS and TiO2 semiconductor quantum dots embedded into PMMA layers
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Abstract
Optical quality PMMA thin film layers including different concentrations of 3nm CdSe/ZnS and 5 nm TiO2 semiconductor quantum dots have been made by spin coating method. Their optical properties show evident consequences of the confinement effects with wavelength bandgap shifting for both types of QDs. The confinement effects are more pronounced for CdSe/ZnS QDs than for TiO2 QDs. Layers including CdSe/ZnS QDs exhibit a strong luminescent behavior centred on 560nm with a stock-shift in front of the first exciton absorption peak.
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Hung-Ju Lin, Hung-Ju Lin, Yu-Jen Chen, Yu-Jen Chen, Judikael Le-Rouzo, Judikael Le-Rouzo, Alexandre Merlen, Alexandre Merlen, Waldir Avansi, Waldir Avansi, Sheng-Hui Chen, Sheng-Hui Chen, François Flory, François Flory, Cheng-Chung Lee, Cheng-Chung Lee, Valmor Roberto Mastelaro, Valmor Roberto Mastelaro, } "Optical and luminescent properties of CdSe/ZnS and TiO2 semiconductor quantum dots embedded into PMMA layers", Proc. SPIE 8465, Nanostructured Thin Films V, 846510 (17 October 2012); doi: 10.1117/12.929268; https://doi.org/10.1117/12.929268
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