Translator Disclaimer
11 October 2012 Multiple-order imaging for optical critical dimension metrology using microscope characterization
Author Affiliations +
There has been much recent work in developing advanced optical metrology applications that use imaging optics for optical critical dimension (OCD) measurements, defect detection, and for potential use with in-die metrology applications. We have previously reported quantitative measurements for sub-50 nm CD dense arrays which scatter only the 0th-order specular diffraction component using angle-resolved scatterfield microscopy. Through angle-resolved and focus-resolved imaging, we now measure OCD targets with three-dimensional scattered fields that contain multiple Fourier frequencies. Experimental sensitivity to nanometer scale linewidth changes is presented, supported by simulation studies. A new, more advanced approach to tool normalization is coupled with rigorous electromagnetic simulations and library based regression fitting that potentially enables OCD measurements with sub-nanometer uncertainties for targets that scatter multiple Fourier frequencies.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Qin, Hui Zhou, Bryan M. Barnes, Francois Goasmat, Ronald Dixson, and Richard M. Silver "Multiple-order imaging for optical critical dimension metrology using microscope characterization", Proc. SPIE 8466, Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors VI, 84660G (11 October 2012);

Back to Top