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11 October 2012 Multiple-order imaging for optical critical dimension metrology using microscope characterization
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Abstract
There has been much recent work in developing advanced optical metrology applications that use imaging optics for optical critical dimension (OCD) measurements, defect detection, and for potential use with in-die metrology applications. We have previously reported quantitative measurements for sub-50 nm CD dense arrays which scatter only the 0th-order specular diffraction component using angle-resolved scatterfield microscopy. Through angle-resolved and focus-resolved imaging, we now measure OCD targets with three-dimensional scattered fields that contain multiple Fourier frequencies. Experimental sensitivity to nanometer scale linewidth changes is presented, supported by simulation studies. A new, more advanced approach to tool normalization is coupled with rigorous electromagnetic simulations and library based regression fitting that potentially enables OCD measurements with sub-nanometer uncertainties for targets that scatter multiple Fourier frequencies.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jing Qin, Hui Zhou, Bryan M. Barnes, Francois Goasmat, Ronald Dixson, and Richard M. Silver "Multiple-order imaging for optical critical dimension metrology using microscope characterization", Proc. SPIE 8466, Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors VI, 84660G (11 October 2012); https://doi.org/10.1117/12.946120
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