11 October 2012 Graded nanowire ultraviolet LEDs by polarization engineering
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Given the large thermal activation energy of acceptors in high %Al AlGaN, a new approach is needed to control p-type conductivity in this material. One promising alternative to using impurity doping with thermal activation is using the intrinsic characteristics of the III-nitrides to activate dopants with polarization-induced charge in graded heterostructures. In this work polarization-induced activation of dopants is used in graded AlGaN nanowires grown by plasma-assisted molecular beam epitaxy to form ultraviolet light-emitting diodes. Electrical and optical characterization is provided, showing clear diode behavior and electroluminescent emission at 336nm. Variable temperature electrical measurements show little change in device performance at cryogenic temperatures, proving that dopant ionization is polarizationinduced rather than thermally activated.
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Santino D. Carnevale, Santino D. Carnevale, Thomas F. Kent, Thomas F. Kent, Patrick J. Phillips, Patrick J. Phillips, A.T.M. Golam Sarwar, A.T.M. Golam Sarwar, Robert F. Klie, Robert F. Klie, Siddharth Rajan, Siddharth Rajan, Roberto C. Myers, Roberto C. Myers, } "Graded nanowire ultraviolet LEDs by polarization engineering", Proc. SPIE 8467, Nanoepitaxy: Materials and Devices IV, 84670L (11 October 2012); doi: 10.1117/12.970450; https://doi.org/10.1117/12.970450

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