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10 October 2012 Double-pulsed PECVD synthesis of hydrogenated nanocrystalline silicon thin films
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Abstract
Our efforts focus on developing a method to produce hydrogenated nanocrystalline silicon (nc-Si:H) with larger crystallites to enhance carrier transport properties. A new PECVD methodology, called double pulsed PECVD (DPPECVD), employs alternating low frequency and high frequency discharge sub-cycles to sequentially grow and etch the evolving film, respectively. This confers enhanced process control compared to conventional methods, and provides a pathway to achieve our goal of enhanced carrier mobility. Preliminary results demonstrate nc-Si:H films possessing grains as large as 29 nm, with (220) preferred orientation, which is suitable for solar cell applications. Reactions between plasma species in a SiF4:H2:SiH4 glow discharge, which expectedly contribute to evolution of large grains, are also discussed. Our findings suggest the double pulse strategy is a valuable method for manipulating the microstructural evolution of PECVD grown thin film materials.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. D. Fields, J. B. Gallon, J. Hu, Ed Valentich, P. C. Taylor, and A. Madan "Double-pulsed PECVD synthesis of hydrogenated nanocrystalline silicon thin films", Proc. SPIE 8470, Thin Film Solar Technology IV, 847007 (10 October 2012); https://doi.org/10.1117/12.930236
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