Extraction of optical properties and thickness of silicon-rich oxide films from ellipsometry measurement

Shu Lin; Ivan Perez Wurfl; Yu Feng

doi:10.1117/12.928461

10 October 2012 Extraction of optical properties and thickness of silicon-rich oxide films from ellipsometry measurement

Shu Lin, Ivan Perez Wurfl, Yu Feng

Author Affiliations +

Proceedings Volume 8470, Thin Film Solar Technology IV; 84700S (2012) https://doi.org/10.1117/12.928461
Event: SPIE Solar Energy + Technology, 2012, San Diego, California, United States

Abstract

For silicon rich oxide (SRO) thin films prepared by sputtering deposition, we have found a trustable structure model to describe the optical properties in the whole region of wavelength. In the process of optical characterization the ellipsometer measures the phase change (Psi and Delta) of light reflected from the thin films, which are then fitted with appropriate structural models using Ellipsometry analysis software WVASE32. We have found that the a-Si/SiO single-layer model can give accurate matches between calculated results and experimental results for the whole measured spectrum. The transmittance data generated from the single-layer model is consistent with the experimental results measured by spectrophotometer. Finally the model is applied to predict the optical behavior of multilayer samples, reasons are sought to explain the difference between the calculated data and the experimental data.

Citation Download Citation

Shu Lin, Ivan Perez Wurfl, and Yu Feng "Extraction of optical properties and thickness of silicon-rich oxide films from ellipsometry measurement", Proc. SPIE 8470, Thin Film Solar Technology IV, 84700S (10 October 2012); https://doi.org/10.1117/12.928461

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