Paper
15 October 2012 Quantum wells and superlattices for III-V photovoltaics and photodetectors
Matthew P. Lumb, Igor Vurgaftman, Chaffra A. Affouda, Jerry R. Meyer, Edward H. Aifer, Robert J. Walters
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Abstract
Semiconductor quantum wells and superlattices have found numerous applications in optoelectronic devices, such as lasers, LEDs and SOAs, and are an increasingly common feature of high efficiency solar cells and photodetectors. In this paper we will highlight some of the recent developments in the use of low-dimensional III-V semiconductors to improve the performance of photovoltaics by tailoring the bandgap of the junction. We also discuss novel structures designed to maximize photo-generated carrier escape and the application of quantum confinement to other components of the solar cell, such as tunnel junctions. Recent developments in type-II superlattices for photodetectors will also be discussed, including the graded-gap LWIR device based on the W-structured superlattices demonstrated at the Naval Research Laboratory. Modeled results will be presented using the NRL BANDSTM integrated 8-band kp and Poisson solver, which was developed for computing the bandstructures of superlattice and multi-quantum well photodiodes
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matthew P. Lumb, Igor Vurgaftman, Chaffra A. Affouda, Jerry R. Meyer, Edward H. Aifer, and Robert J. Walters "Quantum wells and superlattices for III-V photovoltaics and photodetectors", Proc. SPIE 8471, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III, 84710A (15 October 2012); https://doi.org/10.1117/12.964654
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Cited by 31 scholarly publications and 1 patent.
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KEYWORDS
Quantum wells

Superlattices

Solar cells

Stereolithography

Electrons

Photodetectors

Quantum efficiency

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