Formation of silicon nanoparticles from high temperature annealed silicon rich silicon oxynitride films

Abdelilah Slaoui; Fabien Ehrhardt; Florian Delachat; Gérald Ferblantier; Dominique Muller

doi:10.1117/12.929261

31 October 2012 Formation of silicon nanoparticles from high temperature annealed silicon rich silicon oxynitride films

Abdelilah Slaoui, Fabien Ehrhardt, Florian Delachat, Gérald Ferblantier, Dominique Muller

Proceedings Volume 8471, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III; 84710B (2012) https://doi.org/10.1117/12.929261
Event: SPIE Solar Energy + Technology, 2012, San Diego, California, United States

Abstract

Silicon rich silicon oxynitride layers were deposited by ECR-PECVD in order to form silicon nanoparticles upon high thermal annealing at 1100°C. The effect of the gas precursor type and flows on the atomic composition and the structural properties was assessed by RBS and ERDA analysis as well as by Raman spectroscopy. The morphological and crystalline properties of the resulting nanoparticles were investigated by TEM analysis. We have found that the silicon nanoparticules average size and the crystalline fraction depend strongly on the silicon excess in the SiN and SiON layer.

Citation Download Citation

Abdelilah Slaoui, Fabien Ehrhardt, Florian Delachat, Gérald Ferblantier, and Dominique Muller "Formation of silicon nanoparticles from high temperature annealed silicon rich silicon oxynitride films", Proc. SPIE 8471, Next Generation (Nano) Photonic and Cell Technologies for Solar Energy Conversion III, 84710B (31 October 2012); https://doi.org/10.1117/12.929261

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