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12 October 2012 Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces
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Abstract
This work discusses the impact of laser annealing on a picosecond laser ablation process of anti-reflection layers on damage etched and random pyramid textured silicon wafers. The laser ablation is realized using picosecond pulsed laser radiation which facilitates a continuously ablated passivation layer but induces a significant reduction in charge carrier lifetime. It is demonstrated that the application of a nanosecond pulsed laser annealing step can improve the electrical properties of the picosecond laser treated area.
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Andreas A. Brand, Annerose Knorz, Ralf Zeidler, Jan-Frederik Nekarda, and Ralf Preu "Nanosecond laser annealing to decrease the damage of picosecond laser ablation of anti-reflection layers on textured silicon surfaces", Proc. SPIE 8473, Laser Material Processing for Solar Energy, 84730D (12 October 2012); https://doi.org/10.1117/12.930491
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