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12 October 2012 Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell
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Abstract
This work reports on the elaboration of a new industrial process based on laser selective ablation of dielectric layers for Interdigitated Back Contact Silicon Heterojunction (IBC Si-HJ) solar cells fabrication. Choice of the process is discussed and cells are processed to validate its performance. A pulsed green laser (515nm) with 10-20ns pulse duration is used for hydrogenated amorphous silicon (a-Si:H) layers patterning steps, whereas metallization is made by screen printed. High Open-Circuit Voltage (Voc=699mV) and Fill Factor (FF=78.5%) values are obtained simultaneously on IBC Si-HJ cells, indicating a high surface passivation level and reduced resistive losses. An efficiency of 19% on non textured 26 cm² solar cells has been reached with this new industrial process.
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S. De Vecchi, T. Desrues, F. Souche, D. Muñoz, and M. Lemiti "Laser assisted patterning of hydrogenated amorphous silicon for interdigitated back contact silicon heterojunction solar cell", Proc. SPIE 8473, Laser Material Processing for Solar Energy, 84730R (12 October 2012); https://doi.org/10.1117/12.929783
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