13 September 2012 Extraction of internal emission characteristics from printed OLEDs
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Accurate optical modeling of OLED device performance is beneficial to OLED manufacturing because as materials and architectures are modified, experimental effort and resources are saved in the search for optimal structures. The success of such modeling depends crucially on model inputs, which include, along with layer thicknesses and optical constants, internal emission characteristics such as the internal emission spectrum (IES) of the emitter and the location and profile of emission in the emissive layer (EML). This presentation will describe two methods we have used to extract the internal emission characteristics of our printed bottom emitting OLEDs. The first method, which we devised and implemented with assumptions specific to our devices, is a simpler one for both modeling and data collection: we collected spectra at normal viewing angle for a series of devices with different architectures, and extracted a normalized IES common to all these devices. We will show how an emission location was obtained from this method with some simple model assumptions. In the more rigorous second method - one presented by van Mensfoort et al 1 - internal emission characteristics were extracted independently for each device: spectra at multiple angles were collected, which allowed the extraction of an individual IES and emission profile. We will compare the findings of the two methods and assess the validity of the assumptions used in the first method.
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Mark L. Hildner, Mark L. Hildner, Jonathan M. Ziebarth, Jonathan M. Ziebarth, "Extraction of internal emission characteristics from printed OLEDs", Proc. SPIE 8476, Organic Light Emitting Materials and Devices XVI, 84761J (13 September 2012); doi: 10.1117/12.961009; https://doi.org/10.1117/12.961009

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