13 September 2012 The mechanism of charge generation in charge generation units containing HATCN for high-luminance tandem OLED display
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Abstract
We report the rate limiting step of charge generation in the charge generation units (CGUs) composed of a p-HTL, HATCN and n-doped electron transporting layer (n-ETL) where TAPC was used as the HTL. Energy level alignment determined by the capacitance-voltage (C-V) measurements and the current density-voltage characteristics of the structure clearly showed that the electron injection at the HATCN/n-ETL junction limits the charge generation in the CGUs rather than charge generation itself at the p-HTL/HATCN junction. Consequently, the CGUs with 30 mol% Rb2CO3 doped BPhen formed with the HATCN layer generates charges very efficiently and the excess voltage required to generate the current density of ±10 mA/cm2 was around 0.17 V, which is extremely small compared with the literature values reported up to now.
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Sunghun Lee, Sunghun Lee, Jeong-Hwan Lee, Jeong-Hwan Lee, Jae-Hyun Lee, Jae-Hyun Lee, Jang-Joo Kim, Jang-Joo Kim, } "The mechanism of charge generation in charge generation units containing HATCN for high-luminance tandem OLED display", Proc. SPIE 8476, Organic Light Emitting Materials and Devices XVI, 84761N (13 September 2012); doi: 10.1117/12.929559; https://doi.org/10.1117/12.929559
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