11 October 2012 Material properties and field-effect transistor characteristics of hybrid organic/graphene active layers
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Proceedings Volume 8478, Organic Field-Effect Transistors XI; 847810 (2012); doi: 10.1117/12.929919
Event: SPIE Organic Photonics + Electronics, 2012, San Diego, California, United States
Abstract
We report on the material properties and device characteristics of field-effect transistors (FETs) consisting of hybrid mono-layer graphene/organic semiconductor active layers. By capping with selected organic and polymeric layers, transformation of the electronic characteristics of mono-layer graphene FETs was observed. The off-state current is reduced while the on-state current and field-effect mobility are either unaffected or increased after depositing π−conjugated organic semiconductors. Significantly, capping mono-layer graphene FETs with fluoropolymer improved the on-off current ratio from 5 to 10 as well as increased the field-effect mobility by factor of two compared to plain graphene FETs. Removal of π−conjugated organic semiconductors or fluoropolymer from graphene FETs results in a return to the original electronic properties of mono-layer graphene FETs. This suggests that weak reversible electronic interactions between graphene and π−conjugated organic semiconductors/fluoropolymer favorably tune the material and electrical characteristics of mono-layer graphene.
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Tae-Jun Ha, Jongho Lee, Sk. Fahad Chowdhury, Deji Akinwande, Ananth Dodabalapur, "Material properties and field-effect transistor characteristics of hybrid organic/graphene active layers", Proc. SPIE 8478, Organic Field-Effect Transistors XI, 847810 (11 October 2012); doi: 10.1117/12.929919; http://dx.doi.org/10.1117/12.929919
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KEYWORDS
Graphene

Field effect transistors

Organic semiconductors

Semiconductors

Silica

Transistors

Resistance

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