11 October 2012 Transient analysis of electrolyte-gated organic field-effect transistors
Author Affiliations +
Abstract
A terminal charge and capacitance model is developed for transient behavior simulation of electrolyte-gated organic field effect transistors (EGOFETs). Based on the Ward-Dutton partition scheme, the charge and capacitance model is derived from our drain current model reported previously. The transient drain current is expressed as the sum of the initial drain current and the charging current, which is written as the product of the partial differential of the terminal charges with respect to the terminal voltages and the differential of the terminal voltages upon time. The validity for this model is verified by experimental measurements.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Deyu Tu, Deyu Tu, Loïg Kergoat, Loïg Kergoat, Xavier Crispin, Xavier Crispin, Magnus Berggren, Magnus Berggren, Robert Forchheimer, Robert Forchheimer, } "Transient analysis of electrolyte-gated organic field-effect transistors", Proc. SPIE 8478, Organic Field-Effect Transistors XI, 84780L (11 October 2012); doi: 10.1117/12.929886; https://doi.org/10.1117/12.929886
PROCEEDINGS
9 PAGES


SHARE
Back to Top