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15 October 2012 High-temperature (350°C) glass phosphor layer for converted white light-emitting diodes
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Abstract
The high-temperature operation up to 350°C of glass phosphor layer for using in converted white light-emitting diodes is demonstrated. The results showed that the phosphor-converted white light-emitting diode (PC-WLEDs) maintained good thermal stability in lumen, chromaticity, and transmittance characteristics at the high temperature up to 350°C. The lumen degradation, chromaticity shift, and transmittance loss in glass based high-power PC-WLEDs under thermal aging at 150, 250, 350, and 450°C are presented and compared with the silicone based high-power PC-WLEDs under thermal aging at 150 and 250°C. The result clearly indicated that the glass based PC-WLEDs exhibited better thermal stability in lumen degradation, chromaticity shift, and transmittance loss than the silicone based PC-WLEDs. The advantages of glass doped encapsulation in high temperature PC-WLEDs could be arisen from the material property of glass transition temperature 567°C higher than silicone of 150°C. These newly developed high-temperature glass based PC-WLEDs are essentially critical to the application of LED modules in the area where the high-power, high-temperature, and absolute reliability are required for use in the next-generation solid-state lighting.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wood-Hi Cheng, Chun-Chin Tsai, Wei-Chih Cheng, Jin-Kai Chang, Ji-Hung Chen, Si-Sheng Hu, Li-Yin Chen, Min-Ching Lin, and Ching-Jen Pan "High-temperature (350°C) glass phosphor layer for converted white light-emitting diodes", Proc. SPIE 8484, Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting, 848409 (15 October 2012); https://doi.org/10.1117/12.928321
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